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Recognized as technologically important materials for optoelectronics, III-nitride wide-bandgap semiconductors are used in light-emitting diodes (LEDs) with emission wavelengths from the ultraviolet to amber, and blue/UV-emitting laser diodes.1 These materials are excellent for photonic devices because of their large energy bandgaps, their highly efficient light emission, and their ability to be bandgap engineered through the use of alloying and heterojunctions. Recent advances have shown that nitrides are also promising materials for optical communications at 1.55 μm. The .continuous variation of the refractive index (n) of AlxGa1-xN with x, from n = 2.34 (x = 0) to n = 2.03 (x = 1) at 1.55 μm makes III-nitrides ideal candidates for optical waveguide devices.2
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